Heightening structure of auxiliary furnace chamber of single crystal furnace
The invention relates to the technical field of single crystal silicon production, in particular to a heightening structure of an auxiliary furnace chamber of a single crystal furnace. The structure comprises a first ring, a second ring, a support, a first telescopic lever, a sliding groove, a slidi...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to the technical field of single crystal silicon production, in particular to a heightening structure of an auxiliary furnace chamber of a single crystal furnace. The structure comprises a first ring, a second ring, a support, a first telescopic lever, a sliding groove, a sliding plate and a balancing weight. When the second ring and the first ring move upwards, the auxiliary furnace chamber heightening pipe synchronously moves upwards on the single crystal furnace body, the whole single crystal furnace body rises, the gravity center of the single crystal furnace body rises, and the gravitational potential energy of the single crystal furnace body is larger; when the single crystal furnace body is driven by the rotary telescopic device to rotate, the gravity center of the single crystal furnace body rises, so that the gravity center of the single crystal furnace body is unstable to a certain extent, and the single crystal furnace body inclines; when the first ring, the second ring and th |
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