Light emitting diode and manufacturing method thereof
The invention provides a light emitting diode and a manufacturing method thereof. The manufacturing method of the light-emitting diode comprises the steps that a plurality of epitaxial structures distributed at intervals are formed on a substrate, each epitaxial structure comprises a first semicondu...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | XU SHENGHAI WANG JIANGBO WU ZHIHAO ZHANG WEI |
| description | The invention provides a light emitting diode and a manufacturing method thereof. The manufacturing method of the light-emitting diode comprises the steps that a plurality of epitaxial structures distributed at intervals are formed on a substrate, each epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, and isolation grooves are formed among the epitaxial structures; a passivation layer is manufactured, the multiple epitaxial structures and the isolation grooves are covered with the passivation layer, and the thickness of the passivation layer ranges from 0.3 micrometer to 6 micrometers; performing graphical processing on the passivation layer to remove the passivation layer at the bottom of the isolation groove; patterning processing is carried out on the passivation layer to form a plurality of first through holes, and the first through holes penetrate through the passivation layer to be communicated with the first semico |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN118335855A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN118335855A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN118335855A3</originalsourceid><addsrcrecordid>eNrjZDD1yUzPKFFIzc0sKcnMS1dIycxPSVVIzEtRyE3MK01LTC4pLQKJ56aWZOSnKJRkpBal5qfxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQwtjY1MLU1NHY2LUAAB0RS1d</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Light emitting diode and manufacturing method thereof</title><source>esp@cenet</source><creator>XU SHENGHAI ; WANG JIANGBO ; WU ZHIHAO ; ZHANG WEI</creator><creatorcontrib>XU SHENGHAI ; WANG JIANGBO ; WU ZHIHAO ; ZHANG WEI</creatorcontrib><description>The invention provides a light emitting diode and a manufacturing method thereof. The manufacturing method of the light-emitting diode comprises the steps that a plurality of epitaxial structures distributed at intervals are formed on a substrate, each epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, and isolation grooves are formed among the epitaxial structures; a passivation layer is manufactured, the multiple epitaxial structures and the isolation grooves are covered with the passivation layer, and the thickness of the passivation layer ranges from 0.3 micrometer to 6 micrometers; performing graphical processing on the passivation layer to remove the passivation layer at the bottom of the isolation groove; patterning processing is carried out on the passivation layer to form a plurality of first through holes, and the first through holes penetrate through the passivation layer to be communicated with the first semico</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240712&DB=EPODOC&CC=CN&NR=118335855A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240712&DB=EPODOC&CC=CN&NR=118335855A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XU SHENGHAI</creatorcontrib><creatorcontrib>WANG JIANGBO</creatorcontrib><creatorcontrib>WU ZHIHAO</creatorcontrib><creatorcontrib>ZHANG WEI</creatorcontrib><title>Light emitting diode and manufacturing method thereof</title><description>The invention provides a light emitting diode and a manufacturing method thereof. The manufacturing method of the light-emitting diode comprises the steps that a plurality of epitaxial structures distributed at intervals are formed on a substrate, each epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, and isolation grooves are formed among the epitaxial structures; a passivation layer is manufactured, the multiple epitaxial structures and the isolation grooves are covered with the passivation layer, and the thickness of the passivation layer ranges from 0.3 micrometer to 6 micrometers; performing graphical processing on the passivation layer to remove the passivation layer at the bottom of the isolation groove; patterning processing is carried out on the passivation layer to form a plurality of first through holes, and the first through holes penetrate through the passivation layer to be communicated with the first semico</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1yUzPKFFIzc0sKcnMS1dIycxPSVVIzEtRyE3MK01LTC4pLQKJ56aWZOSnKJRkpBal5qfxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQwtjY1MLU1NHY2LUAAB0RS1d</recordid><startdate>20240712</startdate><enddate>20240712</enddate><creator>XU SHENGHAI</creator><creator>WANG JIANGBO</creator><creator>WU ZHIHAO</creator><creator>ZHANG WEI</creator><scope>EVB</scope></search><sort><creationdate>20240712</creationdate><title>Light emitting diode and manufacturing method thereof</title><author>XU SHENGHAI ; WANG JIANGBO ; WU ZHIHAO ; ZHANG WEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118335855A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>XU SHENGHAI</creatorcontrib><creatorcontrib>WANG JIANGBO</creatorcontrib><creatorcontrib>WU ZHIHAO</creatorcontrib><creatorcontrib>ZHANG WEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>XU SHENGHAI</au><au>WANG JIANGBO</au><au>WU ZHIHAO</au><au>ZHANG WEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Light emitting diode and manufacturing method thereof</title><date>2024-07-12</date><risdate>2024</risdate><abstract>The invention provides a light emitting diode and a manufacturing method thereof. The manufacturing method of the light-emitting diode comprises the steps that a plurality of epitaxial structures distributed at intervals are formed on a substrate, each epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, and isolation grooves are formed among the epitaxial structures; a passivation layer is manufactured, the multiple epitaxial structures and the isolation grooves are covered with the passivation layer, and the thickness of the passivation layer ranges from 0.3 micrometer to 6 micrometers; performing graphical processing on the passivation layer to remove the passivation layer at the bottom of the isolation groove; patterning processing is carried out on the passivation layer to form a plurality of first through holes, and the first through holes penetrate through the passivation layer to be communicated with the first semico</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN118335855A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Light emitting diode and manufacturing method thereof |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T02%3A15%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=XU%20SHENGHAI&rft.date=2024-07-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN118335855A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |