Light emitting diode and manufacturing method thereof

The invention provides a light emitting diode and a manufacturing method thereof. The manufacturing method of the light-emitting diode comprises the steps that a plurality of epitaxial structures distributed at intervals are formed on a substrate, each epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, and isolation grooves are formed among the epitaxial structures; a passivation layer is manufactured, the multiple epitaxial structures and the isolation grooves are covered with the passivation layer, and the thickness of the passivation layer ranges from 0.3 micrometer to 6 micrometers; performing graphical processing on the passivation layer to remove the passivation layer at the bottom of the isolation groove; patterning processing is carried out on the passivation layer to form a plurality of first through holes, and the first through holes penetrate through the passivation layer to be communicated with the first semico