GaAs/CNT/GO photoelectrode material for non-auxiliary water decomposition and preparation method and application thereof

The invention discloses a GaAs/CNT/GO photoelectrode material for non-auxiliary water decomposition as well as a preparation method and application of the GaAs/CNT/GO photoelectrode material, and belongs to the technical field of photoelectrodes. The photoelectrode material comprises a back electrode, a GaAs substrate, CNT and GO from bottom to top, the CNT is a carbon nano tube, the GO is graphene oxide, and the CNT and the GO are both single-layer nano materials. By using GO, the absorption spectrum range of the photoelectrode material is further widened, and the photocurrent density is effectively improved; meanwhile, a composite transmission layer material is formed with CNT, so that the transmission of photo-generated holes is effectively promoted, the initial potential of the photoelectrode is greatly reduced, and efficient non-auxiliary water decomposition is realized. The photoelectrode material is simple in preparation method, low in cost and good in stability, and a good foundation is provided for p