Gallium nitride semiconductor laser element

The invention provides a gallium nitride semiconductor laser element. The gallium nitride semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top. And a low-resistance p-type contact layer is arranged on the upper limiting layer. According to the gallium nitride semiconductor laser element provided by the invention, the low-resistance p-type contact layer is arranged above the upper limiting layer, so that the Mg acceptor activation energy of the p-type contact layer can be reduced, the Mg hole concentration of the p-type contact layer can be improved, and the resistance of the p-type contact layer can be reduced, thereby reducing the voltage of the laser, improving the bipolar conductivity of the laser, and improving the reliability of the laser. And the problem of voltage rise after lasing of the laser is solved. 本发明提