Sapphire-based transparent near ultraviolet light-emitting device preparation process equipment and method

The invention provides sapphire-based transparent near-ultraviolet light-emitting device preparation process equipment and method, and relates to the technical field of transparent near-ultraviolet light-emitting devices. The equipment comprises a glove box, a sample storage chamber, a metal organic matter chemical vapor deposition chamber, a nitrogen source remote plasma enhanced chemical vapor deposition chamber, an oxygen source remote plasma enhanced chemical vapor deposition chamber and a sample exchange chamber. According to the multi-cavity combined equipment provided by the invention, high-yield assembly line type batch preparation of sapphire-based transparent ultraviolet light-emitting device epitaxial wafer materials can be realized, and the designed and prepared multi-layer stress regulation and control structure can more effectively overcome the problem of large mismatch stress of sapphire-based zinc oxide transparent electrode materials and gallium nitride epitaxial layer materials; and preparat