Superlattice double-color infrared photoelectric detector and manufacturing method thereof

The invention relates to the technical field of semiconductors, in particular to a superlattice double-color infrared photoelectric detector, which comprises a substrate, a buffer layer, a lower absorption layer, a barrier layer, an upper absorption layer and an upper ohmic contact layer, and is characterized in that table surfaces are etched on the barrier layer, the upper absorption layer and the upper ohmic contact layer; the super-lattice double-color infrared photoelectric detector is used for forming pixel isolation, ions are injected into an imaging element isolation groove of the imaging element isolation and used for reducing crosstalk among imaging elements, and by applying the super-lattice double-color infrared photoelectric detector, the etching depth of the device pixel isolation groove can be reduced, the duty ratio of the device can be improved, and the performance of the device can be improved. 本发明涉及半导体技术领域，尤其涉及一种超晶格双色红外光电探测器，所述超晶格双色红外光电探测器，包括：衬底，缓冲层，下吸收层，势垒层，上吸收层以及上欧姆接触层，其中，所述势垒层、所述上吸收层以及所述上