Method of forming semiconductor device
A method of forming a gate structure of a stacked multi-gate device is provided. A method of forming a semiconductor device according to the present disclosure includes forming a gate dielectric layer to surround a bottom channel member and a top channel member, depositing a dipole layer over the ga...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A method of forming a gate structure of a stacked multi-gate device is provided. A method of forming a semiconductor device according to the present disclosure includes forming a gate dielectric layer to surround a bottom channel member and a top channel member, depositing a dipole layer over the gate dielectric layer, forming a dummy layer such that the top channel member is disposed over a top surface of the dummy layer, removing the dipole layer around the top channel member, and forming a gate dielectric layer over the top channel member. The method includes forming a dummy layer on a top surface of the gate dielectric layer, forming a self-assembled monolayer (SAM) on a top surface of the dummy layer, depositing a hard mask layer to surround over the top channel member, removing the SAM and the dummy layer, performing a thermal drive-in process to drive a dipole dopant species from the dipole layer into the gate dielectric layer around the bottom channel member, removing the hard mask layer, and removing |
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