Tungsten indium oxide target material and preparation method thereof

The invention belongs to the field of semiconductors, and particularly relates to a preparation method of an indium tungsten oxide target material, which comprises the following steps: step 1, mixing first powder with second powder to obtain mixed powder, the particle size of the first powder being 90-110 [mu] m, and the particle size of the second powder being 10-35 [mu] m; the weight ratio of the first powder to the second powder is 1: 8-1: 18; the metal oxides in the first powder and the second powder are composed of indium oxide and tungsten oxide; 2, the mixed powder is sintered for the first time, a primary sintered product is obtained, and the sintering temperature ranges from 800 DEG C to 1000 DEG C; 3, the primary sintering product is subjected to hot press molding, and a plain blank is obtained; and 4, carrying out secondary sintering on the blank to obtain the indium tungsten oxide target material. The crystal particle size of the target material is 4-8 microns, and the target material has relative