Preparation method for synthesizing silicon carbide from gaseous elemental carbon

The invention relates to a preparation method for synthesizing silicon carbide from gaseous elemental carbon, which comprises the following steps: S1, placing a carbon source in a reaction chamber 1, and heating the carbon source to obtain gaseous elemental carbon, the carbon source being high-purity fullerene; s2, placing a silicon source in a reaction chamber 2, and heating the silicon source to 1100-1900 DEG C; and S3, under the protection of an inert gas atmosphere, enabling gaseous elemental carbon to flow into the reaction chamber 2, carrying out heat preservation reaction for 4-10 hours, enabling the gaseous elemental carbon to react with the silicon source, and cooling after the reaction is completed, so as to obtain the silicon carbide. The silicon carbide prepared by the method has the characteristics of large particles and high purity, is favorable for improving the performance of a semiconductor material, and has an excellent industrial application prospect. 本发明涉及一种气态单质碳合成碳化硅的制备方法，包括以下步骤：S1，在反应室1放