Gallium arsenide solar cell and preparation method and application thereof

The invention discloses a gallium arsenide solar cell and a preparation method and application thereof. The gallium arsenide solar cell comprises a first electrode layer, a GaAs substrate, a PEDOT: PSS layer or a carbon nanotube layer, an indium phosphide quantum dot layer, an insulating layer and a second electrode layer which are sequentially stacked, the insulating layer and the second electrode layer are each provided with a window, and the window in the insulating layer and the window in the second electrode layer at least partially coincide. The gallium arsenide solar cell has the advantages of high photoelectric conversion efficiency, wide spectrum utilization range, high photocurrent density and the like, and the gallium arsenide solar cell is simple in preparation process, low in production cost and suitable for large-scale industrial application. 本发明公开了一种砷化镓太阳电池及其制备方法和应用。本发明的砷化镓太阳电池的组成包括依次层叠设置的第一电极层、GaAs衬底、PEDOT:PSS层或碳纳米管层、磷化铟量子点层、绝缘层和第二电极层，绝缘层和第二电极层均设置有窗口，且绝缘层上的窗口与第二电极层上的窗口至少部分重合。本发明的砷化镓太阳电池具有光电转换效