Memory preparation method and memory

The invention provides a memory preparation method and a memory, a memory unit material layer is firstly formed, then a hard mask layer is formed on one side of the memory unit material layer, the hard mask layer comprises nitrogen, silicon and hydrogen elements, then the hard mask layer is etched to form an opening, the hard mask layer is processed by using inert gas, and the opening is formed on the other side of the memory unit material layer. The hard mask layer is provided with an opening, a groove is formed in the storage unit material layer by using the opening, and the content of hydrogen in the hard mask layer can be reduced by processing the hard mask layer by inert gas, so that the purity of nitrogen and silicon is improved, the nitrogen and silicon are more compact and more resistant to etching, and the loss of the hard mask layer in the subsequent process can be reduced. 本申请提供了一种存储器的制备方法和存储器，先形成存储单元材料层，再在存储单元材料层的一侧形成硬掩模层，所述硬掩模层包括氮、硅和氢元素，接着对所述硬掩模层进行刻蚀形成开口，采用惰性气体对所述硬掩模层进行处理，并利用所述开口在所述存储单元材料层中形成沟槽，由