Micro-super junction structure for power semiconductor device and manufacturing method of micro-super junction structure

The invention discloses a micro-super junction structure for a power semiconductor device and a manufacturing method of the micro-super junction structure, an N-drift region is arranged on a heavily doped N + substrate, a P-N-cross distributed micro-super junction structure is arranged in a cellular region on the N-drift region, a P well region and an N neck region are arranged on the P-N-cross distributed micro-super junction structure, and the P well region and the N neck region are in cross distribution. The P well region is located on the P-region and has a transverse width larger than that of the P-region, N + regions and P + regions are arranged in the P well region, and the P + regions are located between the N + regions and have a depth larger than that of the N + regions. Compared with a conventional product, when the same epitaxial thickness and resistivity are adopted, the high voltage resistance is higher, or the equivalent voltage resistance is obtained by reducing the epitaxial resistivity while