Substrate processing method

According to the substrate processing method, a cavity and a pedestal are used, a processing space is formed in the cavity, and a substrate is placed on the pedestal; the antenna is positioned at the upper part of the base and is arranged on the outer side of the cavity so as to generate plasma from source gas; the upper surface of the susceptor is provided with: a mounting surface on which the substrate is placed during processing; and a control surface which is located at the periphery of the mounting surface, is provided so as to face the processing space, is exposed to the plasma during the process, and is located at a position lower than the mounting surface, the substrate processing method being characterized by including: assuming that the height difference between the control surface and the mounting surface is X; assuming that the interval between the mounting surface of the base and the lower end of the antenna is Y; a step of combining X and Y to measure the uniformity of the substrate processed by