SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device including highly integrated memory cells and a method of manufacturing the same. The semiconductor device may include: a vertical conductive line; a horizontal layer horizontally oriented from the vertical conductive line and including a first horizontal portion and a second horizontal portion thinner than the first horizontal portion; a horizontal conductive line intersecting a first horizontal portion of the horizontal layer; and a data storage element including a first electrode including a fused dual barrel coupled to a second horizontal portion of the horizontal layer. 一种包括高度集成的存储单元的半导体装置及其制造方法。半导体装置可以包括：垂直导电线；水平层，其从所述垂直导电线水平地定向并且包括第一水平部和比所述第一水平部薄的第二水平部；水平导电线，其与所述水平层的第一水平部交叉；以及数据存储元件，其包括第一电极，所述第一电极包括耦接至所述水平层的第二水平部的融合双筒体。