THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SAME

A thin film transistor, a method of manufacturing the same, and a display device including the same are provided. The thin film transistor includes an active layer and a gate electrode partially overlapping the active layer, in which the active layer includes a channel portion, a first connection portion contacting one side of the channel portion, and a second connection portion spaced apart from the first connection portion and contacting the other side of the channel portion, the channel portion includes a first channel portion overlapping the gate electrode and a second channel portion not overlapping the gate electrode. 提供了薄膜晶体管、薄膜晶体管的制造方法以及包括薄膜晶体管的显示装置。薄膜晶体管包括有源层和与有源层部分地交叠的栅极电极，其中，有源层包括沟道部、接触沟道部的一侧的第一连接部和与第一连接部间隔开并且接触沟道部的另一侧的第二连接部，其中，沟道部包括与栅极电极交叠的第一沟道部分和不与栅极电极交叠的第二沟道部分。