Method for improving Cu hillock defect

The invention discloses a method for improving Cu hill-shaped protrusion defects. The method comprises the following steps: providing a substrate on which a Cu layer is formed; pretreatment is conducted, NH3 is adopted as process gas for pretreatment, and in the pretreatment process, H ions formed through NH3 decomposition reduce copper oxide on the surface of the Cu layer into Cu; and N ions formed by NH3 decomposition perform nitridation on Cu in the surface area of the Cu layer to form copper nitride. The deposition process of the silicon nitride thin film is carried out, and in the deposition process, diffusion of Cu generated under the action of a thermal process is suppressed by utilizing the adhesiveness of copper nitride, so that Cu hill-shaped protrusion defects are reduced. According to the invention, the Cu hill-shaped bump defect can be reduced, so that the performance of a device such as an MIM capacitor is improved. 本发明公开了一种改善Cu丘状突起缺陷的方法，包括：提供形成有Cu层的基片。进行预处理，预处理的工艺气体采用NH3，在预处理中，NH3分解形成的H离子将所述Cu层