Semiconductor packaging structure preparation method based on hybrid bonding

The invention provides a hybrid bonding-based semiconductor packaging structure preparation method, which comprises the following steps of: independently preparing two independent parts of a rewiring layer so as to form a second rewiring layer and a third rewiring layer, and then respectively grinding the surfaces of the second rewiring layer and the third rewiring layer to obtain flat surfaces; the second rewiring layer and the third rewiring layer are bonded by adopting a hybrid bonding process, so that a semiconductor packaging structure which is good in bonding performance, higher in interconnection density, smaller and simpler in circuit, larger in bandwidth, lower in capacitance and lower in power consumption can be obtained, and the current-carrying capacity and the thermal performance of a chip are improved. 本发明提供一种基于混合键合的半导体封装结构制备方法，将重新布线层的制备分成独立的两部分单独制备以形成第二重新布线层与第三重新布线层，而后分别对第二重新布线层与第三重新布线层进行表面研磨获得平坦表面后，采用混合键合工艺将第二重新布线层与第三重新布线层进行键合，可获得键合性能良好，具有更高的互连密度、更小和更简单的电路、更大的带宽、更低的电容和更低的功耗的半导体封装结构，提高芯片载流能力和热性