Dynamic H3TRB test circuit and test method for silicon carbide power device and diode

The invention discloses a dynamic H3TRB test circuit and test method for a silicon carbide power device and a diode. The circuit comprises a plurality of half-bridge topology circuits which are connected in parallel, two test accompanying circuits and a direct-current power supply, each half-bridge topology circuit comprises two to-be-tested samples and a sampling resistor which are sequentially connected in series; the test accompanying circuit comprises a current-limiting resistor, a test accompanying sample and a sampling resistor; the upper bridge device shares one path of driving signal, the lower bridge device shares one path of driving signal, and the two paths of driving signals have the same frequency and opposite polarities and are provided with dead time. A failure mechanism of the dynamic H3TRB is caused by water vapor invading a device, so that in order to eliminate heating of a tested device and hindering of water vapor invading caused by generated current in an on state, a half-bridge topologic