Formation method of semiconductor structure and semiconductor structure

A method of forming a semiconductor structure includes forming a plurality of strip patterns over a semiconductor substrate, forming a hard mask layer over the strip patterns, forming a patterned photoresist layer having a plurality of first openings over the hard mask layer, and forming a plurality of second openings over the patterned photoresist layer. And etching the hard mask layer using the patterned photoresist layer. The remaining portion of the hard mask layer forms a plurality of pillar patterns spaced apart from each other. The method further includes depositing a dielectric layer along the pillar pattern, etching the dielectric layer to form a plurality of second openings, removing the pillar pattern to form a plurality of third openings, and etching the strip pattern using the dielectric layer as a mask. By utilizing the semiconductor memory device, the manufacturing cost of the semiconductor memory device can be reduced, and the manufacturing yield of the semiconductor memory device can be impro