THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SAME

A thin film transistor, a method of manufacturing the same, and a display device including the same are provided. The thin film transistor includes: an active layer including a channel, a first connection portion and a second connection portion contacting opposite sides of the channel; and a gate electrode overlapping the channel of the active layer. Wherein the active layer comprises a first active layer; a second active layer on the first active layer in a first connection portion and a second connection portion of the active layer; and a third active layer contacting the first active layer in the channel and contacting the second active layer in the first connection portion and the second connection portion. 提供了一种薄膜晶体管及其制造方法以及包括薄膜晶体管的显示设备。薄膜晶体管包括：有源层，该有源层包括沟道、接触沟道的相对侧的第一连接部分和第二连接部分；以及栅极，该栅极与有源层的沟道交叠。其中，有源层包括：第一有源层；第二有源层，该第二有源层在有源层的第一连接部分和第二连接部分中位于第一有源层上；以及第三有源层，该第三有源层在沟道中接触第一有源层并且在第一连接部分和第二连接部分中接触第二有源层。