Double-gate field stop type insulated gate bipolar transistor
The invention provides a double-gate field cut-off type insulated gate bipolar transistor. According to the bipolar transistor, a positive emitter conductive type trench structure and a negative emitter conductive type trench structure are formed through a gate metal layer, an auxiliary gate metal l...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a double-gate field cut-off type insulated gate bipolar transistor. According to the bipolar transistor, a positive emitter conductive type trench structure and a negative emitter conductive type trench structure are formed through a gate metal layer, an auxiliary gate metal layer, an emitter trench heavily doped first conductive type polycrystalline silicon layer and an emitter trench insulating dielectric layer; when the bipolar transistor is turned on and turned off in the forward direction, holes of the lightly-doped second conduction type depletion region are processed through the positive emitter conduction type groove structure and the negative emitter conduction type groove structure. According to the bipolar transistor provided by the invention, during forward conduction, the hole potential barrier of the lightly doped conductive depletion region is improved, the hole of the drift region is enhanced, the corresponding carrier storage effect is improved, and the conduction volta |
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