Silicon material re-feeding method for prolonging single-furnace operation time of single crystal furnace
The invention provides a silicon material re-feeding method for prolonging the operation time of a single furnace of a single crystal furnace, which comprises the following steps: continuously re-feeding a plurality of cylinders of silicon materials, re-feeding each cylinder of silicon material comp...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a silicon material re-feeding method for prolonging the operation time of a single furnace of a single crystal furnace, which comprises the following steps: continuously re-feeding a plurality of cylinders of silicon materials, re-feeding each cylinder of silicon material comprises feeding and melting, and heating through a main heater positioned on the outer side of a crucible and a bottom heater positioned below the crucible in the feeding and melting processes, during feeding, the crucible is located at a feeding crucible position, after feeding is completed, the crucible is lifted to a material melting crucible position for material melting, and the crucible position represents the distance between the bottom face of a crucible support at the bottom of the crucible and the upper surface of the bottom heater; when the crucible is located at the material melting crucible position, the upper edge of the crucible is higher than the upper edge of the main heater, and a silicon material i |
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