HgCdTe infrared detector and chip manufacturing method thereof

The invention discloses a mercury-cadmium-telluride infrared detector and a chip manufacturing method thereof, and belongs to the technical field of semiconductors, and the chip manufacturing method of the mercury-cadmium-telluride infrared detector comprises the following steps: providing a first substrate which is provided with a metal electrode; a second passivation layer is formed on the surface of the first substrate, and an opening is formed in the second passivation layer to expose the metal electrode; and depositing indium metal in the opening to form a concave indium base. By growing a second passivation layer, forming an opening in the second passivation layer, and forming a concave indium pedestal in the opening, indium column sideslip is prevented in the process of face-down bonding. By changing the diameter and the shape of the opening, the required diameter and the required shape of the opening can be obtained, and then the corresponding indium base is obtained. 本发明公开了一种碲镉汞红外探测器及其芯片制造方法，属于半导体技术领