Isostatic pressing graphite high-temperature vacuum furnace for manufacturing large semiconductor silicon wafer

The invention relates to the technical field of semiconductor large silicon wafer manufacturing, in particular to an isostatic pressing graphite high-temperature vacuum furnace for semiconductor large silicon wafer manufacturing. Comprising a supporting frame, a vacuum furnace body fixedly arranged on the supporting frame, a plurality of transverse plates annularly and fixedly arranged on the supporting frame, a temperature control unit used for adjusting the temperature in the vacuum furnace body and a monitoring unit used for monitoring the temperature in the vacuum furnace body. The temperature control unit comprises a plurality of sealing plates annularly and rotationally arranged on the supporting frame and a power mechanism used for driving the sealing plates to rotate, the sealing plates and the transverse plates are arranged in a staggered mode, the sealing plates are closed to form a heat preservation plate with the transverse plates, and a heat preservation cavity is formed in the space between the