Semiconductor device

A semiconductor device includes a lateral NDMOS transistor as each of a first electrostatic protection diode (M21), a second electrostatic protection diode (M22), and a third electrostatic protection diode (M23), the lateral NDMOS transistor being thyrified by forming a p-type dopant region in a dra...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YUKI TADAO, TANAKA SATOSHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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