Semiconductor device
A semiconductor device includes a lateral NDMOS transistor as each of a first electrostatic protection diode (M21), a second electrostatic protection diode (M22), and a third electrostatic protection diode (M23), the lateral NDMOS transistor being thyrified by forming a p-type dopant region in a dra...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A semiconductor device includes a lateral NDMOS transistor as each of a first electrostatic protection diode (M21), a second electrostatic protection diode (M22), and a third electrostatic protection diode (M23), the lateral NDMOS transistor being thyrified by forming a p-type dopant region in a drain thereof. For example, the anode of the first electrostatic protection diode (M21) is connected to a first signal terminal (CANH); an anode of the second electrostatic protection diode (M22) is connected to a second signal terminal (CANL); and the anode of the third electrostatic protection diode (M23) is connected to the ground terminal (GND). And the cathodes of the first electrostatic protection diode (M21), the second electrostatic protection diode (M22) and the third electrostatic protection diode (M23) are connected together.
一种半导体装置，包括横向NDMOS晶体管作为第一静电保护二极管(M21)、第二静电保护二极管(M22)和第三静电保护二极管(M23)中的每一个，该横向NDMOS晶体管通过在其漏极中形成p型掺杂物区域而晶闸管化。例如，第一静电保护二极管(M21)的阳极连接到第一信号端子(CANH)；第二静电保护二极管(M22)的阳极连接到第二信号端子(CANL)；并且第三静电保护二极 |
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