Three-dimensional (3D) memory device and method of manufacture

A method for fabricating a 3D memory device includes forming a sacrificial layer over a substrate, forming a first dielectric stack over the sacrificial layer, forming a channel hole structure, forming an opening exposing the sacrificial layer, removing the sacrificial layer to create a cavity and expose a portion of the channel hole structure, forming a semiconductor layer to fill the cavity, and forming a second dielectric stack over the semiconductor layer. The opening is filled with a fill structure, and a second dielectric stack is formed over the fill structure. The opening is made of a gate gap (GLS) structure. 公开了一种用于制造3D存储装置的方法，包括：在衬底之上形成牺牲层，在牺牲层之上形成第一电介质堆叠体，形成沟道孔结构，形成暴露牺牲层的开口，去除牺牲层以产生空腔并暴露沟道孔结构的一部分，形成半导体层以填充空腔，用填充结构填充开口，并在填充结构之上形成第二电介质堆叠体。所述开口是为栅缝隙(GLS)结构制作的。