Thin film transistor, gate driver including same, and display device

Disclosed are a thin film transistor having an oxide semiconductor layer, a gate driver including the thin film transistor, and a display device including the thin film transistor, the thin film transistor being applicable to a flat panel display device requiring high-speed driving due to ultra-high definition. The thin film transistor includes a first oxide semiconductor layer formed of an iron-indium-zinc oxide (FIZO) and a second oxide semiconductor layer formed of an indium-gallium-zinc oxide (IGZO), and thus can exhibit effects such as high reliability and high electron mobility. 公开了一种具有氧化物半导体层的薄膜晶体管、包括该薄膜晶体管的栅极驱动器以及包括该薄膜晶体管的显示装置，该薄膜晶体管可应用于由于超高清晰度而需要高速驱动的平板显示装置。薄膜晶体管包括由铁-铟-锌氧化物(FIZO)形成的第一氧化物半导体层和由铟-镓-锌氧化物(IGZO)形成的第二氧化物半导体层，因此能够表现出诸如高可靠性和高电子迁移率的效果。