Selective metal caps in interconnect structures

The invention discloses a selective metal cap in an interconnect structure. Various embodiments provide a method and a resulting structure, the method including forming an opening in a dielectric layer to expose a metal feature, selectively depositing a metal cap on the metal feature, depositing a barrier layer over the metal cap, and depositing a conductive filler on the barrier layer. 本申请公开了互连结构中的选择性金属帽。各实施例提供一种方法和所得结构，该方法包括：在电介质层中形成开口以暴露金属特征，在金属特征上选择性地沉积金属帽，在金属帽之上沉积阻挡层，以及在阻挡层上沉积导电填充物。