NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE

The invention provides a nonvolatile memory device including a voltage generator and a method of operating the nonvolatile memory device. The method includes: calculating a difference between a voltage level of a first word line node and a voltage level of a second word line node; changing a first reference voltage level of the voltage generator to a second reference voltage level based on a difference between the voltage levels; and determining a target voltage level based on one of the first reference voltage level and the second reference voltage level. The first word line node may be closer to an output of the voltage generator than the second word line node. 提供了包括电压生成器的非易失性存储器件和操作非易失性存储器件的方法，所述方法包括：计算第一字线节点的电压电平与第二字线节点的电压电平之间的差；基于所述电压电平之间的差将所述电压生成器的第一参考电压电平改变为第二参考电压电平；以及基于所述第一参考电压电平和所述第二参考电压电平中的一者确定目标电压电平。与所述第二字线节点相比，所述第一字线节点可以更靠近所述电压生成器的输出端。