Method for establishing temperature model of non-segmented SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device by considering physical characteristics

The invention discloses a method for establishing a non-segmented SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device temperature model by considering physical characteristics, which comprises the following steps of: obtaining undetermined parameters in a device model through a mat...

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Bibliographische Detailangaben

Hauptverfasser:	GENG LI, GU ZHAOYUAN, YANG MINGCHAO, YANG YI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING PHYSICS
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