Method for establishing temperature model of non-segmented SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device by considering physical characteristics

The invention discloses a method for establishing a non-segmented SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device temperature model by considering physical characteristics, which comprises the following steps of: obtaining undetermined parameters in a device model through a mathematical fitting method according to an output characteristic curve and a capacitance curve of an actual test at different temperatures, and establishing a SiC MOSFET device model for circuit simulation based on an SPICE tool, the step of establishing the SiC MOSFET device model comprises the sub-steps of establishing an equivalent circuit model of the device and integrally describing the device, and the equivalent circuit model of the device comprises an output current model of the device, a capacitance model of the device and a temperature model of the device; obtaining an output current model of the device according to the actually measured output characteristic curve of the device at the room temperature; obta