Chip neighborhood electric field equivalent model suitable for middle-high voltage silicon carbide power module and modeling method

The invention discloses a chip neighborhood electric field equivalent model suitable for a middle-high voltage silicon carbide power module and a modeling method. The chip neighborhood electric field equivalent model comprises a DBC substructure model, a chip substructure model and a potting material substructure model. The DBC substructure model comprises a first metal layer, a second metal layer and a first insulating medium layer, and the upper layer and the lower layer of the first insulating medium layer are the first metal layer and the second metal layer respectively; the chip substructure model comprises a third metal layer, a fourth metal layer, a second insulating medium layer, a third insulating medium layer, a fourth insulating medium layer, a fifth insulating medium layer and a sixth insulating medium layer, the upper left layer of the third metal layer is a second insulating medium layer, the third insulating medium layer and the fourth insulating medium layer are located in the second insulatin