Crucible lifting control method for single crystal furnace
The invention provides a crucible lifting control method for a single crystal furnace, which relates to the technical field of single crystals and comprises the following steps: S1, adopting a segmented fixed crucible lifting mode to enable an actual liquid level to rise near a target liquid level;...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a crucible lifting control method for a single crystal furnace, which relates to the technical field of single crystals and comprises the following steps: S1, adopting a segmented fixed crucible lifting mode to enable an actual liquid level to rise near a target liquid level; the step of fixed crucible lifting in sections refers to that corresponding fixed crucible lifting speeds are respectively adopted in different equal-diameter length ranges; s2, the actual liquid level is made to be equal to the target liquid level in a compensation crucible rising mode; s3, the actual liquid level is kept at the target liquid level in the mode that fixed crucible lifting is combined with compensation crucible lifting; and the fixed crucible lifting means that a fixed crucible lifting speed is adopted within a specified equal-diameter length range. In the first stage, the actual liquid level rises to the position close to the target liquid level through segmented fixed crucible rising, in the secon |
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