Etching solution for copper thick film

Provided is an etching solution for a copper thick film, which has a high etching rate, and which is capable of etching even at a high copper ion concentration to increase the thickness of a copper film so as to maintain a conventional manufacturing speed. The etching solution for a copper thick film, which contains hydrogen peroxide, a strongly acidic substance, an amine compound, a hydrogen peroxide decomposition inhibitor, an azole and water and has a pH of less than 2, can etch a copper film at an etching rate of 380 nm/min or more at a high copper ion concentration of 20000 ppm, and can further adjust a taper angle to 30-80 DEG. 提供：蚀刻速率高、在高铜离子浓度下也能进行蚀刻使得铜的膜厚变厚以可以维持以往那样的制造速度的铜厚膜用蚀刻液。包含过氧化氢、强酸性物质、胺化合物、过氧化氢分解抑制剂、唑类和水、且pH低于2的铜厚膜用蚀刻液在铜离子浓度为20000ppm的高铜离子浓度下也可以以380nm/分钟以上的蚀刻速率对铜膜进行蚀刻，进一步锥角也可以调整为30°～80°。