Selective graphene deposition

An exemplary semiconductor processing method may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within a processing region of a semiconductor processing chamber. The substrate may include a low dielectric constant material defining one or more features, a liner extending across the low dielectric constant material and within the one or more features, and a metal-containing layer deposited on the liner and extending within the one or more features. The method may include forming a material layer on at least a portion of the liner and the metal-containing layer. The material layer may include graphene. The method may include removing substantially all portions of the material layer on the liner. 示例性半导体处理方法可包括：将含碳前驱物提供至半导体处理腔室的处理区域。基板可设置于半导体处理腔室的处理区域内。基板可包括：界定一个或多个特征的低介电常数材料、跨低介电常数材料延伸且在一个或多个特征内的衬垫，以及沉积于衬垫上并在一个或多个特征内延伸的含金属层。所述方法可包括：在衬垫的至少一部分和含金属层上形成材料层。材料层可包括石墨烯。所述方法可包括：去除衬垫上的材料层的基本上所有部分。