Crossbar logic architecture based on aluminum-scandium-nitrogen thin film and preparation method

The invention provides a crossbar logic architecture based on an aluminum-scandium-nitrogen thin film and a preparation method. The method comprises the following steps: S1, preparing a silicon-based substrate; s2, growing an underlying metal film on the silicon-based substrate in a sputtering manner, and carrying out photoetching on the uniformly grown underlying metal film to obtain a plurality of independent electrodes; s3, sputtering and growing an AlScN thin film on the bottom metal thin film, wherein the AlScN thin film grows on the upper surface of the independent electrode to form a ferroelectric thin film capacitor; and S4, growing a top metal film on the uniformly grown AlScN film, and performing sleeve etching on the uniformly grown top metal film, the top metal film being connected in series with a ferroelectric film capacitor, reducing electric leakage while reducing the thickness of the aluminum-scandium-nitrogen film, realizing a low-electric leakage, low-cost and expandable crossbar logic arch