Silicon optical chip integrated with BTO electro-optical modulator and manufacturing method thereof
The invention provides a silicon optical chip integrated with a BTO electro-optical modulator and a manufacturing method of the silicon optical chip. The silicon optical chip integrated with the BTO electro-optical modulator comprises a silicon optical chip body, the BTO modulator and a coating laye...
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| creator | HU HAO LIU JUN SHEN XIAO'AN |
| description | The invention provides a silicon optical chip integrated with a BTO electro-optical modulator and a manufacturing method of the silicon optical chip. The silicon optical chip integrated with the BTO electro-optical modulator comprises a silicon optical chip body, the BTO modulator and a coating layer. The coating layer is arranged on the silicon optical chip, and the BTO modulator is embedded in the coating layer; wherein the BTO modulator comprises a BTO layer, a first electrode and a second electrode; the BTO layer is arranged on the silicon optical chip, and the first electrode and the second electrode are arranged on the two sides of the BTO layer respectively. According to the structure and the method, an expensive SOI substrate does not need to be used for epitaxy of the BTO thin film, that is, an STO buffer layer is not needed, and the high-quality BTO epitaxial single crystal thin film is directly integrated on a silicon light front channel substrate in a back channel mode by removing the substrate th |
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The silicon optical chip integrated with the BTO electro-optical modulator comprises a silicon optical chip body, the BTO modulator and a coating layer. The coating layer is arranged on the silicon optical chip, and the BTO modulator is embedded in the coating layer; wherein the BTO modulator comprises a BTO layer, a first electrode and a second electrode; the BTO layer is arranged on the silicon optical chip, and the first electrode and the second electrode are arranged on the two sides of the BTO layer respectively. According to the structure and the method, an expensive SOI substrate does not need to be used for epitaxy of the BTO thin film, that is, an STO buffer layer is not needed, and the high-quality BTO epitaxial single crystal thin film is directly integrated on a silicon light front channel substrate in a back channel mode by removing the substrate th</description><language>chi ; eng</language><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240618&DB=EPODOC&CC=CN&NR=118210163A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240618&DB=EPODOC&CC=CN&NR=118210163A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HU HAO</creatorcontrib><creatorcontrib>LIU JUN</creatorcontrib><creatorcontrib>SHEN XIAO'AN</creatorcontrib><title>Silicon optical chip integrated with BTO electro-optical modulator and manufacturing method thereof</title><description>The invention provides a silicon optical chip integrated with a BTO electro-optical modulator and a manufacturing method of the silicon optical chip. The silicon optical chip integrated with the BTO electro-optical modulator comprises a silicon optical chip body, the BTO modulator and a coating layer. The coating layer is arranged on the silicon optical chip, and the BTO modulator is embedded in the coating layer; wherein the BTO modulator comprises a BTO layer, a first electrode and a second electrode; the BTO layer is arranged on the silicon optical chip, and the first electrode and the second electrode are arranged on the two sides of the BTO layer respectively. 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The silicon optical chip integrated with the BTO electro-optical modulator comprises a silicon optical chip body, the BTO modulator and a coating layer. The coating layer is arranged on the silicon optical chip, and the BTO modulator is embedded in the coating layer; wherein the BTO modulator comprises a BTO layer, a first electrode and a second electrode; the BTO layer is arranged on the silicon optical chip, and the first electrode and the second electrode are arranged on the two sides of the BTO layer respectively. According to the structure and the method, an expensive SOI substrate does not need to be used for epitaxy of the BTO thin film, that is, an STO buffer layer is not needed, and the high-quality BTO epitaxial single crystal thin film is directly integrated on a silicon light front channel substrate in a back channel mode by removing the substrate th</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | Silicon optical chip integrated with BTO electro-optical modulator and manufacturing method thereof |
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