Silicon optical chip integrated with BTO electro-optical modulator and manufacturing method thereof
The invention provides a silicon optical chip integrated with a BTO electro-optical modulator and a manufacturing method of the silicon optical chip. The silicon optical chip integrated with the BTO electro-optical modulator comprises a silicon optical chip body, the BTO modulator and a coating laye...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a silicon optical chip integrated with a BTO electro-optical modulator and a manufacturing method of the silicon optical chip. The silicon optical chip integrated with the BTO electro-optical modulator comprises a silicon optical chip body, the BTO modulator and a coating layer. The coating layer is arranged on the silicon optical chip, and the BTO modulator is embedded in the coating layer; wherein the BTO modulator comprises a BTO layer, a first electrode and a second electrode; the BTO layer is arranged on the silicon optical chip, and the first electrode and the second electrode are arranged on the two sides of the BTO layer respectively. According to the structure and the method, an expensive SOI substrate does not need to be used for epitaxy of the BTO thin film, that is, an STO buffer layer is not needed, and the high-quality BTO epitaxial single crystal thin film is directly integrated on a silicon light front channel substrate in a back channel mode by removing the substrate th |
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