Integrated circuit device and method of forming same

The integrated circuit device includes a first type transistor and a second type transistor stacked on each other at a front side of a substrate. The second type transistor is located between the first type transistor and the substrate. The integrated circuit device also includes a front side inductor having one or more conductors in a front side upper metal layer over the first type transistor and the second type transistor; and a backside inductor having one or more conductors in a backside lower metal layer at the backside of the substrate. The front side inductor, the first type transistor, and the second type transistor form a stack directly over the back side inductor. The embodiment of the invention also relates to a method for forming the integrated circuit device. 集成电路器件包括在衬底的前侧处彼此堆叠的第一类型晶体管和第二类型晶体管。第二类型晶体管位于第一类型晶体管和衬底之间。集成电路器件也包括：前侧电感器，具有位于第一类型晶体管和第二类型晶体管之上的前侧上部金属层中的一个或多个导体；以及背侧电感器，具有位于衬底的背侧处的背侧下部金属层中的一个或多个导体。前侧电感器、第一类型晶体管和第二类型晶体管在背侧电感器正上方形成堆叠件。本申请的实施例还涉及形成集成电路器件的方法。