Electrostatic discharge protection structure

The invention discloses an electrostatic discharge protection structure. The electrostatic discharge protection structure comprises a semiconductor substrate, and a first n-type well region, a p-type well region, a first p-type doped region, a second p-type doped region and an isolation structure wh...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SU GUANCHENG, TANG TIANHAO, QIU HOUREN, ZHAO MEILING, LIN YOUXUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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