Electrostatic discharge protection structure

The invention discloses an electrostatic discharge protection structure. The electrostatic discharge protection structure comprises a semiconductor substrate, and a first n-type well region, a p-type well region, a first p-type doped region, a second p-type doped region and an isolation structure which are arranged in the semiconductor substrate, the p-type well region is adjacent to the first n-type well region, and the first p-type doped region and the second p-type doped region are located on the first n-type well region and the p-type well region respectively. The first part of the isolation structure is located between the first p-type doped region and the second p-type doped region in the horizontal direction, the edge of the first n-type well region is located below the first part, and the distance between the first p-type doped region and the edge of the first n-type well region in the horizontal direction is smaller than the length of the first part in the horizontal direction. 本发明公开一种静电放电保护结构，其包括半导体