Light-wiping polishing composition

The invention provides a light-rubbing polishing composition. The light-rubbing polishing composition comprises cerium oxide grinding particles, an anionic polymer, a cationic polymer, nitrogen-containing heterocyclic carboxylic acid and a nonionic surfactant. According to the polishing composition provided by the invention, a polishing solution component which is almost free of grinding particles and is used for light wiping of silicon oxide is used, and the light wiping polishing composition can remove a silicon oxide dielectric layer (for example, the polishing rate with the solid content lower than 50 ppm is larger than # imgabs0 #) and stops on tungsten, silicon nitride or polycrystalline silicon (the polishing rate is smaller than # imgabs1 # or smaller than # imgabs2 # or smaller than # imgabs3 #). 本发明提供了一种轻擦抛光组合物，包括：氧化铈研磨颗粒，阴离子型聚合物，阳离子型聚合物，含氮杂环羧酸和非离子型表面活性剂。本发明提供的抛光组合物，使用近乎没有研磨颗粒的用于氧化硅轻擦的抛光液组分，轻擦抛光组合物能够去除氧化硅介电层，(比如，低于50ppm固含量的抛光速率大于#imgabs0#)，停止在钨，氮化硅或者多晶硅上(抛光速率小于#imgabs1#或者小于#imgabs2#或者小于#imgabs3#)。