Preparation method of high-anisotropy magnetoresistance perovskite thin film based on chemical spin-coating method

The invention discloses a preparation method of a high-anisotropy magnetoresistance perovskite thin film based on a chemical spin-coating method, which comprises the following specific steps: mixing La (NO3) 3.6 H2O, Ca (NO3) 2.4 H2O, Mn (NO3) 2.9 H2O, Nd (NO3) 3.6 H2O, ethylene glycol, citric acid...

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Hauptverfasser: YANG SHENG'AN, CHEN QINGMING, SHI RUIPENG, MA JI, SHAO MEN, YANG ZHIYUAN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses a preparation method of a high-anisotropy magnetoresistance perovskite thin film based on a chemical spin-coating method, which comprises the following specific steps: mixing La (NO3) 3.6 H2O, Ca (NO3) 2.4 H2O, Mn (NO3) 2.9 H2O, Nd (NO3) 3.6 H2O, ethylene glycol, citric acid and methanol to form a precursor solution, carrying out vacuumizing defoaming, filtering and aging treatment, spin-coating the precursor solution on a strontium titanate substrate, heating for shaping, and carrying out high-temperature annealing to obtain the high-anisotropy magnetoresistance perovskite thin film. And repeating the three steps of spin coating, heating shaping and annealing for three times to obtain the high-quality manganese-based perovskite thin film. The preparation method is low in equipment requirement, high in efficiency and high in precursor solution purity, and the prepared film is low in roughness, moderate in thickness, high in crystallization quality and excellent in magnetoresistance per