Photocatalytic material as well as preparation method and application thereof

The invention relates to a photocatalytic material and a preparation method and application thereof, and belongs to the technical field of photocatalysis, CdIn2S4 and Ti3C2Tx-coated TiO2 are effectively constructed together to obtain a ternary efficient photocatalytic material, the photocatalytic ma...

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Bibliographische Detailangaben
Hauptverfasser: LU XIAOYAN, YUAN WEIWEI, LI MENGMENG, WANG SHUANG, NIU XINKAI, WEI QI, QI JIARONG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to a photocatalytic material and a preparation method and application thereof, and belongs to the technical field of photocatalysis, CdIn2S4 and Ti3C2Tx-coated TiO2 are effectively constructed together to obtain a ternary efficient photocatalytic material, the photocatalytic material is a Ti3C2Tx-coated TiO2/CdIn2S4 ternary S-type heterojunction, and the mass ratio of Ti3C2Tx-coated TiO2 to CdIn2S4 in the heterojunction is (3: 1)-(1: 1). CdIn2S4 serves as one of ternary metal sulfide (TMS) semiconductors, the band gap is relatively narrow (2.1-2.7 eV), due to introduction of CdIn2S4, the photocatalytic performance of the material is remarkably improved, and tests prove that the photocatalytic material can effectively utilize visible light to produce hydrogen. 本发明涉及一种光催化材料及其制备方法与应用,属于光催化技术领域,本发明将CdIn2S4与Ti3C2Tx@TiO2多组分有效构建在一起,获得一种三元高效光催化材料,所述光催化材料为Ti3C2Tx@TiO2/CdIn2S4三元S型异质结,所述异质结中Ti3C2Tx@TiO2与CdIn2S4的质量比为3:1~1:1。CdIn2S4作为三元金属硫化物(TMS)半导体的一种,带隙相对较窄(2.1-2.7 eV),由于CdIn2S4的引入,显著的提升了材料的光催化性能,经