Atomic layer deposition seam reduction
Methods and apparatus for depositing a material into a feature are disclosed herein. Methods involve depositing an oxide material followed by sputtering the oxide material to reduce seams. The oxide material may be deposited by an ALD treatment. 本文中公开了用于将材料沉积至特征中的方法和装置。方法涉及沉积氧化物材料接着溅射氧化物材料以减少接缝。氧化物材...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | AGNEW DOUGLAS WALTER BAKER JONATHAN GRANT |
description | Methods and apparatus for depositing a material into a feature are disclosed herein. Methods involve depositing an oxide material followed by sputtering the oxide material to reduce seams. The oxide material may be deposited by an ALD treatment.
本文中公开了用于将材料沉积至特征中的方法和装置。方法涉及沉积氧化物材料接着溅射氧化物材料以减少接缝。氧化物材料可以通过ALD处理来沉积。 |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN118176563A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN118176563A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN118176563A3</originalsourceid><addsrcrecordid>eNrjZFBzLMnPzUxWyEmsTC1SSEktyC_OLMnMz1MoTk3MVShKTSlNBnF5GFjTEnOKU3mhNDeDoptriLOHLlBDfGpxQWJyal5qSbyzn6GhhaG5mamZsaMxMWoAgLknxA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Atomic layer deposition seam reduction</title><source>esp@cenet</source><creator>AGNEW DOUGLAS WALTER ; BAKER JONATHAN GRANT</creator><creatorcontrib>AGNEW DOUGLAS WALTER ; BAKER JONATHAN GRANT</creatorcontrib><description>Methods and apparatus for depositing a material into a feature are disclosed herein. Methods involve depositing an oxide material followed by sputtering the oxide material to reduce seams. The oxide material may be deposited by an ALD treatment.
本文中公开了用于将材料沉积至特征中的方法和装置。方法涉及沉积氧化物材料接着溅射氧化物材料以减少接缝。氧化物材料可以通过ALD处理来沉积。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240611&DB=EPODOC&CC=CN&NR=118176563A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240611&DB=EPODOC&CC=CN&NR=118176563A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AGNEW DOUGLAS WALTER</creatorcontrib><creatorcontrib>BAKER JONATHAN GRANT</creatorcontrib><title>Atomic layer deposition seam reduction</title><description>Methods and apparatus for depositing a material into a feature are disclosed herein. Methods involve depositing an oxide material followed by sputtering the oxide material to reduce seams. The oxide material may be deposited by an ALD treatment.
本文中公开了用于将材料沉积至特征中的方法和装置。方法涉及沉积氧化物材料接着溅射氧化物材料以减少接缝。氧化物材料可以通过ALD处理来沉积。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBzLMnPzUxWyEmsTC1SSEktyC_OLMnMz1MoTk3MVShKTSlNBnF5GFjTEnOKU3mhNDeDoptriLOHLlBDfGpxQWJyal5qSbyzn6GhhaG5mamZsaMxMWoAgLknxA</recordid><startdate>20240611</startdate><enddate>20240611</enddate><creator>AGNEW DOUGLAS WALTER</creator><creator>BAKER JONATHAN GRANT</creator><scope>EVB</scope></search><sort><creationdate>20240611</creationdate><title>Atomic layer deposition seam reduction</title><author>AGNEW DOUGLAS WALTER ; BAKER JONATHAN GRANT</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118176563A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>AGNEW DOUGLAS WALTER</creatorcontrib><creatorcontrib>BAKER JONATHAN GRANT</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AGNEW DOUGLAS WALTER</au><au>BAKER JONATHAN GRANT</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Atomic layer deposition seam reduction</title><date>2024-06-11</date><risdate>2024</risdate><abstract>Methods and apparatus for depositing a material into a feature are disclosed herein. Methods involve depositing an oxide material followed by sputtering the oxide material to reduce seams. The oxide material may be deposited by an ALD treatment.
本文中公开了用于将材料沉积至特征中的方法和装置。方法涉及沉积氧化物材料接着溅射氧化物材料以减少接缝。氧化物材料可以通过ALD处理来沉积。</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi ; eng |
recordid | cdi_epo_espacenet_CN118176563A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Atomic layer deposition seam reduction |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T12%3A57%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=AGNEW%20DOUGLAS%20WALTER&rft.date=2024-06-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN118176563A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |