Atomic layer deposition seam reduction

Methods and apparatus for depositing a material into a feature are disclosed herein. Methods involve depositing an oxide material followed by sputtering the oxide material to reduce seams. The oxide material may be deposited by an ALD treatment. 本文中公开了用于将材料沉积至特征中的方法和装置。方法涉及沉积氧化物材料接着溅射氧化物材料以减少接缝。氧化物材...

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Hauptverfasser: AGNEW DOUGLAS WALTER, BAKER JONATHAN GRANT
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creator AGNEW DOUGLAS WALTER
BAKER JONATHAN GRANT
description Methods and apparatus for depositing a material into a feature are disclosed herein. Methods involve depositing an oxide material followed by sputtering the oxide material to reduce seams. The oxide material may be deposited by an ALD treatment. 本文中公开了用于将材料沉积至特征中的方法和装置。方法涉及沉积氧化物材料接着溅射氧化物材料以减少接缝。氧化物材料可以通过ALD处理来沉积。
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title Atomic layer deposition seam reduction
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