Atomic layer deposition seam reduction

Methods and apparatus for depositing a material into a feature are disclosed herein. Methods involve depositing an oxide material followed by sputtering the oxide material to reduce seams. The oxide material may be deposited by an ALD treatment. 本文中公开了用于将材料沉积至特征中的方法和装置。方法涉及沉积氧化物材料接着溅射氧化物材料以减少接缝。氧化物材...

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Hauptverfasser:	AGNEW DOUGLAS WALTER, BAKER JONATHAN GRANT
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods and apparatus for depositing a material into a feature are disclosed herein. Methods involve depositing an oxide material followed by sputtering the oxide material to reduce seams. The oxide material may be deposited by an ALD treatment. 本文中公开了用于将材料沉积至特征中的方法和装置。方法涉及沉积氧化物材料接着溅射氧化物材料以减少接缝。氧化物材料可以通过ALD处理来沉积。