Preparation method of two-dimensional layered MOn material for solar-blind ultraviolet detector

The invention relates to a preparation method of a two-dimensional layered MOn material for a solar-blind ultraviolet detector, which is characterized in that a transition metal chalcogenide two-dimensional layered single crystal MXn is oxidized into an MOn wide-band-gap two-dimensional layered sing...

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Bibliographische Detailangaben
Hauptverfasser:	ZOU BINGQIAN, LONG MINGSHENG, HOU XINGYUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to a preparation method of a two-dimensional layered MOn material for a solar-blind ultraviolet detector, which is characterized in that a transition metal chalcogenide two-dimensional layered single crystal MXn is oxidized into an MOn wide-band-gap two-dimensional layered single crystal material, and the single crystal is prepared by an oxidation reaction; mOn is obtained by oxidizing MXn; the method comprises the following steps: putting a target MXn two-dimensional layered single crystal material into a tubular furnace, and heating for 5-10 hours; preparing Ga2O3: 550 DEG C; hfO2: 450 DEG C; moO2: 550 DEG C; wO3 is 650 DEG C, the introduced compressed air is interrupted, finally oxidation is performed to obtain an MOn single material, and the MOn solar-blind ultraviolet detector based on the wide-band-gap two-dimensional layered material is constructed. The light absorption material MOn of the solar-blind ultraviolet detector is mainly formed by oxidizing chalcogenide which is easy to