Semiconductor device and manufacturing method thereof

The method includes connecting a photonic package to a substrate, where the photonic package includes a waveguide and an edge coupler optically coupled to the waveguide; connecting the semiconductor device to the substrate adjacent to the photonic package; depositing a first protective material on a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CAI ZONGFU, WANG CHAOREN, LU SIWEI, YU ZHENHUA
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:The method includes connecting a photonic package to a substrate, where the photonic package includes a waveguide and an edge coupler optically coupled to the waveguide; connecting the semiconductor device to the substrate adjacent to the photonic package; depositing a first protective material on a first sidewall of the photonic package adjacent to the edge coupler; encapsulating the photonic package and the semiconductor device with an encapsulant; performing a first sawing process through the encapsulant and the substrate, where the first sawing process exposes the first protective material; and removing the first protective material to expose the first sidewall of the photonic package. The embodiment of the invention also relates to a semiconductor device and a manufacturing method thereof. 方法包括:将光子封装件连接至衬底,其中,光子封装件包括波导和光学耦合至波导的边缘耦合器;将半导体器件邻近光子封装件连接至衬底;在光子封装件的邻近边缘耦合器的第一侧壁上沉积第一保护材料;用密封剂密封光子封装件和半导体器件;穿过密封剂和衬底实施第一锯切工艺,其中,第一锯切工艺暴露第一保护材料;以及去除第一保护材料以暴露光子封装件的第一侧壁。本申请的实施例还涉及半导体器件及其制造方法。